features plastic material used carries underwriters laboratory classifications 94v-0 metal silicon junction, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data cases: jedec to-263 molded plastic body terminals: pure tin plated, lead free. solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 2.1 gram approximately maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol units maximum recurrent peak reverse voltage v rrm 35 45 50 60 90 100 150 v maximum rms voltage v rms 24 31 35 42 63 70 105 v maximum dc blocking voltage v dc 35 45 50 60 90 100 150 v maximum average forward rectified current at tc=105 o c i (av) 15 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=105 o c i frm 15 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a maximum instantaneous forward voltage at: (note 2) i f =7.5a, t c =25 o c i f =7.5a, t c =125 o c i f =15a, t c =25 o c i f =15a, t c =125 o c v f 0.57 0.84 0.72 0.75 0.65 0.92 0.82 1.05 0.92 v maximum instantaneous reverse current @ tc =25 o c at rated dc blocking voltage @ tc=125 o c (note 2) i r 0.5 10 0.3 7.5 0.1 5.0 ma ma voltage rate of change (rated v r ) dv/dt 1,000 v/us typical junction capacitance cj 400 200 pf m aximum t ypical t hermal resistance (note 3) r ja r jc 10 1.5 o c/w operating junction temperature range t j -65 to +150 o c storage temperature range t stg -65 to +175 o c notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. mount on heatsink size of 2 ? x 3 ? x 0.25? al-plate. common cathode ac ac to-263/d2pak unit : inch (mm) mbrs mbrs mbrs mbrs mbrs mbrs mbrs 1545ct 1535ct 1550ct 1560ct 1590ct 15100ct 15150ct positive ct ? mbrs1535ct thru mbr15150ct pb free plating product mbrs1535ct thru mbr15150ct 15.0 ampere surface mount schottky barrier rectifiers for pv application pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2
fig.1- forward current derating curve average for ward current . (a) 0 50 100 150 0 5 10 15 20 25 case temperature. ( c) o resistive or inductive load fig.2- maximum non-repetitive forward surge current per leg peak for ward surge current . (a) 1 10 100 50 150 200 0 100 250 300 number of cycles at 60hz tj=tj max. 8.3ms single half sine wave jedec method fig.3- typical instantaneous forward characteristics per leg instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) pulse width=300 s 1% duty cycle tj=25 c 0 tj=125 c 0 fig.4- typical reverse characteristics per leg instantaneous reverse current . (ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 mbrs1535ct-mbrs1545ct mbrs1550ct-mbrs15150ct tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal per leg characteristics transient thermal impedance ( c/w) o 1 0.01 0.1 10 100 0.1 10.0 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance per leg junction cap acitance.(pf) 0.1 1.0 10 100 40 100 1,000 4,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 mbrs1535ct-mbrs1560ct mbrs1590ct-mbrs15150ct mbrs1535ct-mbrs1545ct mbrs1550ct-mbrs1560ct mbrs1590ct-mbrs15150ct 500 4.0 50 10 mbrs15150ct mbrs1590ct -15100ct ratings and characteristic curves (mbrs1535ct thru mbrs15150ct) ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 ? mbrs1535ct thru mbr15150ct
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